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r08ds0039ej0200 rev.2.00 page 1 of 17 sep 06, 2011 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. 1. v dd 1 2. v in+ 3. v in ? 4. gnd1 5. gnd2 6. v out ? 7. v out+ 8. v dd 2 pin connection (top view) 12 4 3 65 87 shield + ? + ? preliminary data sheet PS8551L4 analog output type optical coupled isolation amplifier description the PS8551L4 is an optically coupled is olation amplifier that uses an ic with a high-accuracy sigma-delta a/d converter and a gaaias light-emitting diode with high-speed re sponse and high luminance efficiency on the input side, and an ic with a high-accuracy d/a converter on the output side. the PS8551L4 is designed specifically for high common m ode transient immunity (cmti) and high linearity (non- linearity). the PS8551L4 is suitable fo r current sensing in motor drives. features ? non-linearity (nl200 = 0.35% max.) ? high common mode transient immunity (cmti = 10 kv/ s min.) ? high isolation voltage (bv = 5 000 vr.m.s.) ? gain tolerance (g = 7.76 to 8.24 ( 3%)) gain: 8 v/v typ. ? package: 8-pin dip lead bending type (gull-wing) for long creepage distance for surface mount (l4) ? embossed tape product: PS8551L4-e3 : 1 000 pcs/reel ? pb-free product ? safety standards ? ul approved: no. e72422 ? csa approved: no. ca 101391 (ca5a, can/csa-c22.2 60065, 60950) ? semko approved: no. 1111155 ? din en60747-5-2 (vde0884 part2) approved: no. 40019182 (option) applications ? ac servo, inverter ? measurement equipment r08ds0039ej0200 rev.2.00 sep 06, 2011 www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 2 of 17 sep 06, 2011 package dimensions (unit: mm) lead bending type (gull-wing) for long creepage distance for surface mount (l4) 9.25 +0.5 ?0.25 6.5 +0.5 ?0.1 10.05 0.4 0.620.25 0.20.15 3.70.35 3.50.2 1.01 +0.4 ?0.2 2.54 0.50.15 photocoupler construction parameter unit (min.) air distance 8 mm outer creepage distance 8 mm isolation distance 0.4 mm www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 3 of 17 sep 06, 2011 marking example r 8551 nt131 no. 1 pin mark 1 31 year assembled (last 1 digit) t n rank code in-house code (t: pb-free) week assembled assembly lot type number company initial ordering information part number order number solder plating specification packing style safety standard approval application part number * 1 PS8551L4 PS8551L4-ax pb-free magazine case 50 pcs standard products PS8551L4 PS8551L4-e3 PS8551L4-e3-ax (ni/pd/au) embossed tape 1 000 pcs/reel (ul, csa, semko approved) PS8551L4-v PS8551L4-v-ax magazine case 50 pcs din en60747-5-2 PS8551L4-v-e3 PS8551L4-v-e3-ax embossed tape 1 000 pcs/reel (vde0884 part2) approved (option) *1 for the application of the safety standard, following part number should be used. www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 4 of 17 sep 06, 2011 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit operating ambient temperature t a 40 to 85 c storage temperature t stg 55 to 125 c supply voltage v dd 1, v dd 2 0 to 5.5 v input voltage v in + , v in ? 2 to v dd 1 0.5 v 2 seconds transient input voltage v in + , v in ? 6 to v dd 1 0.5 v output voltage v out + , v out ? 0.5 to v dd 2 0.5 v isolation voltage *1 bv 5 000 vr.m.s. *1 ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output. pins 1-4 shorted together, 5-8 shorted together. recommended operating conditions parameter symbol min. max. unit operating ambient temperature t a ? 40 85 c supply voltage v dd 1, v dd 2 4.5 5.5 v input voltage (accurate and linear) *1 v in + , v in ? ? 200 200 mv *1 using v in ? = 0 v (to be connected to gnd1) is recommended. avoid using v in ? of 2.5 v or more, because the internal test mode is activated when the voltage v in ? reaches more than 2.5 v. www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 5 of 17 sep 06, 2011 electrical characteristics (dc characteristics) (typ.: t a = 25 c, v in + = v in ? = 0 v, v dd 1 = v dd 2 = 5 v, min., max.: refer to recommended operat ing conditions, unless otherwise specified) parameter symbol conditions min. typ. max. unit input offset voltage v os t a = 25 c ? 2 0.3 2 mv ? 3 3 input offset voltage drift vs. temperature ? dv os /dt a ? t a = 25 to +85 c 3 10 v/ c gain *1 g ? 200 mv v in + 200 mv, t a = 25 c 7.76 8 8.24 v/v gain drift vs. temperature ? dg/dt a ? 0.00087 v/v c v out non-linearity (200 mv) *2 nl200 ? 200 mv v in + 200 mv 0.021 0.35 % v out non-linearity (200 mv) drift vs. temperature ? dnl200/dt a ? 0.0002 %/ c v out non-linearity (100 mv) *2 nl100 ? 100 mv v in + 100 mv 0.014 0.2 % maximum input voltage before v out clipping ? v in + ? max. 308 mv input supply current i dd 1 v in + = 400 mv 16 20 ma output supply current i dd 2 v in + = ? 400 mv 10 16 ma input bias current i in + v in + = 0v ? 0.5 5 a input bias current drift vs. temperature ? di in + /dt a ? 0.45 na/ c low level saturated output voltage v ol v in + = ? 400 mv 1.29 v high level saturated output voltage v oh v in + = 400 mv 3.8 v output voltage (v in + = v in ? = 0 v) v ocm v in + = v in ? = 0 v 2.2 2.55 2.8 v output short-circuit current ? i osc ? 18.6 ma equivalent input resistance r in 320 k v out output resistance r out 15 input dc common-mode rejection ratio *3 cmrr in 76 db *1 the differential output voltage (v out+ ? v out ? ) with respect to the differential input voltage (v in+ ? v in ? ), where v in+ = ? 200 mv to 200 mv and v in ? = 0 v) is measured under the circuit shown in fig. 2 nl200, g test circuit . upon the resulting chart, the gain is defined as the slope of the optimum line obtained by using the method of least squares. *2 the differential output voltage (v out+ ? v out ? ) with respect to the differential input voltage (v in+ ? v in ? ) is measured under the circuit shown in fig. 2 nl200, g test circuit . upon the resulting chart, the optimum line is obtained by using the method of least squares. non-linearity is defined as the ratio (%) of the optimum line obtained by dividing [half of the peak to peak value of the (residual) deviation] by [full-scale differential output voltage]. for example, if the differential output vo ltage is 3.2 v, and the peak to peak val ue of the (residual) deviation is 22.4 mv, while the input v in+ is 200 mv, the output non-linearity is obtained as follows: nl200 = 22.4/(2 3 200) = 0.35% *3 cmrr in is defined as the ratio of the differential signal gain (when the differential signal is applied between the input pins) to the common-mode signal gain (when both input pins are connected and the signal is applied). this value is indicated in db. www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 6 of 17 sep 06, 2011 electrical characteristics (ac characteristics) (typ.: t a = 25 c, v in + = v in ? = 0 v, v dd 1 = v dd 2 = 5 v, min., max.: refer to recommended operatin g conditions, unless otherwise specified) parameter symbol conditions min. typ. max. unit v out bandwidth ( ? 3 db) f c v in + = 200 mv p-p , sine wave 50 100 khz v out noise n out v in + = 0 v 31.5 mvr.m.s. v in to v out signal delay (50 to 10%) t pd10 v in + = 0 to 150 mv step 2.03 3.3 s v in to v out signal delay (50 to 50%) t pd50 4.01 5.6 v in to v out signal delay (50 to 90%) t pd90 6.02 9.9 v out rise time/fall time (10 to 90%) t r /t f v in + = 0 to 150 mv step 3.53 6.6 s common mode transient immunity *1 cmti v cm = 0.5 kv, t a = 25 c 10 25 kv/ s power supply noise rejection *2 psr f = 1 mhz 100 mvr.m.s. *1 cmti is tested by applying a pulse that rises and falls suddenly (v cm = 0.5 kv) between gnd1 on the input side and gnd2 on the output side (pins 4 and 5) by using the circuit shown in fig. 9 cmti test circuit . cmti is defined at the point where the differential output voltage (v out+ ? v out ? ) fluctuates 200 mv (>1 s) or more from the average output voltage. *2 this is the value of the transient vo ltage at the differential output when 1 v p-p , 1 mhz, and 40 ns rise/fall time square wave is applied to both v dd 1 and v dd 2. www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 7 of 17 sep 06, 2011 test circuit fig. 1 v os test circuit fig. 2 nl200, g test circuit fig. 3 i dd 1 test circuit fig. 4 i dd 2 test circuit v dd1 v dd2 10 k 10 k 0.1 f shield + ? + ? 0.1 f 0.47 f 0.47 f v out +15 v ?15 v 0.1 f 0.1 f ad624cd (x100) v dd1 v in v dd2 10 k 10 k 0.1 f shield + ? + ? 0.1 f 0.47 f 0.01 f 0.47 f 0.47 f 10 k 13.2 404 +15 v ?15 v 0.1 f 0.1 f ad624cd (x4) v out +15 v ?15 v 0.1 f 0.1 f ad624cd (x10) 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 0.01 f shield + ? + ? 1 5 v i dd 1 400 mv 2 3 4 8 7 6 5 0.1 f 0.01 f shield + ? + ? 1 5 v ? 400 mv 2 3 4 8 7 6 5 0.1 f 0.1 f 5 v i dd 2 ? + ? + ? + www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 8 of 17 sep 06, 2011 fig. 5 i in+ test circuit fig. 6 v out test circuit v ol v ocm v oh 0.01 f shield + ? + ? 1 ? 400 mv 2 3 4 8 7 6 5 0.1 f 0.1 f 5 v 5 v 0.01 f shield + ? + ? 1 5 v i in+ 2 3 4 8 7 6 5 0.1 f v ol 0.01 f shield + ? + ? 1 2 3 4 8 7 6 5 0.1 f 0.1 f 5 v 5 v v ocm 0.01 f shield + ? + ? 1 400 mv 2 3 4 8 7 6 5 0.1 f 0.1 f 5 v 5 v v oh www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 9 of 17 sep 06, 2011 fig. 7 |i osc | test circuit fig. 8 t pd test circuit fig. 9 cmti test circuit v dd1 v in v dd2 2 k 10 k 2 k 0.1 f shield + ? + ? 0.1 f 0.01 f +15 v ?15 v 0.1 f 0.1 f ne5534 v out 1 2 3 4 8 7 6 5 i osc 0.01 f shield + ? + ? 1 2 3 4 8 7 6 5 0.1 f 0.1 f 5 v 9 v 78l05 5 v i osc 0.01 f shield + ? + ? 1 2 3 4 8 7 6 5 0.1 f 0.1 f 5 v 5 v 10 k v dd2 2 k 2 k 0.1 f 0.1 f shield + ? + ? 0.1 f pc813 v out 1 2 3 4 8 7 6 5 10 k 150 pf 10 k 150 pf in out v cm +15 v ?15 v ? + 0.1 f 0.1 f + ? + ? www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 10 of 17 sep 06, 2011 typical characteristics (t a = 25 c, unless otherwise specified) 3 2 1 0 ? 1 ? 2 ? 3 4.5 4.75 5 5.25 5.5 ?50 ?25 0 25 50 75 100 ?50 ?25 0 25 50 75 100 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 ambient temperature t a ( c) supply voltage v dd (v) supply voltage v dd (v) input offset voltage v os (mv) input offset voltage v os (mv) input offset voltage vs. ambient temperature input offset voltage vs. supply voltage ambient temperature t a ( c) gain g (v/v) gain g (v/v) gain vs. ambient temperature gain vs. supply voltage non-linearity vs. ambient temperature non-linearity vs. supply voltage non-linearity nl200 (%) supply voltage v dd (v) ambient temperature t a ( c) non-linearity nl200 (%) 2 1.5 1 0.5 0 ? 0.5 ? 1 ? 1.5 ? 2 8.24 8.2 8.16 8.12 8.08 8.04 8 7.96 7.92 7.88 7.84 7.8 7.76 8.24 8.2 8.16 8.12 8.08 8.04 8 7.96 7.92 7.88 7.84 7.8 7.76 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 v dd 1 = v dd 2 = 5 v v in+ = ? 200 mv to +200 mv, v in ? = 0 v v dd 1 = v dd 2 = 5 v v in+ = ? 200 mv to +200 mv, v in ? = 0 v v dd 1 = v dd 2 = 5 v v in+ = v in ? = 0 v v in+ = v in ? = 0 v v in+ = ? 200 mv to +200 mv, v in ? = 0 v v in+ = ? 200 mv to +200 mv, v in ? = 0 v v dd 2 v dd 1 v dd 1 v dd 1 v dd 2 v dd 2 ?50 ?25 0 25 50 75 100 4.5 4.75 5 5.25 5.5 4.5 4.75 5 5.25 5.5 remark the graphs indicate nominal characteristics. www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 11 of 17 sep 06, 2011 4 3.5 3 2.5 2 1.5 1 ? 50 ? 25 0 25 50 75 100 10 100 1 000 10 000 100 000 1 000 000 7 6 5 4 3 2 1 0 input voltage v in (v) input voltage v in (v) frequency f (hz) output voltage v o (v) supply current i dd (ma) input voltage vs. output voltage supply current vs. input voltage input voltage v in+ (v) input current i in+ ( a) gain g v (db) input current vs. input voltage gain vs. frequency phase vs. frequency signal delay time vs. ambient temperature phase (deg.) ambient temperature t a ( c) frequency f (hz) signal delay time pd ( s) 20 18 16 14 12 10 8 6 4 2 0 5 4 3 2 1 0 ? 1 ? 2 ? 3 ? 4 ? 5 1 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 6 ? 7 ? 8 50 0 ? 50 ? 100 ? 150 ? 200 v dd 1 = v dd 2 = 5 v v in ? = 0 v v dd 1 = v dd 2 = 5 v, v in ? = 0 v v in+ = 0 to 150 mv step v dd 1 = v dd 2 = 5 v, v in ? = 0 v v in+ = 200 mv p ? p sine wave v dd 1 = v dd 2 = 5 v, v in ? = 0 v v in+ = 200 mv p ? p sine wave v dd 1 = v dd 2 = 5 v v dd 1 = v dd 2 = 5 v v out+ i dd 2 i dd 1 v out ? ? 0.4 ? 0.2 0 0.2 0.4 ? 0.4 ? 0.2 0 0.2 0.4 ? 0.4 ? 0.2 0 0.2 0.4 10 100 1 000 10 000 100 000 1 000 000 t pd10 t r t pd50 t pd90 remark the graphs indicate nominal characteristics. www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 12 of 17 sep 06, 2011 taping specifications (unit: mm) outline and dimensions (tape) 1.550.1 2.00.1 4.00.1 1.750.1 4.65 max. 9.950.1 12.00.1 1.5 +0.1 ?0 7.50.1 10.550.1 16.00.3 4.20.1 0.30.05 outline and dimensions (reel) packing: 1 000 pcs/reel 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 15.9 to 19.4 outer edge of flange 21.51.0 17.51.0 tape direction PS8551L4-e3 www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 13 of 17 sep 06, 2011 recommended mount pad dimensions (unit: mm) d c b a part number PS8551L4 lead bending a lead bending type (gull-wing) for surface mount 9.0 b 2.54 c 1.7 d 2.0 www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 14 of 17 sep 06, 2011 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temperature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220 c 180 c package surface temperature t ( c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260 c max. 120 c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron ? peak temperature (lead part temperature) 350 c or below ? time (each pins) 3 seconds or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the poi nt 1.5 to 2.0 mm from the root of the lead www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 15 of 17 sep 06, 2011 (4) cautions ? fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocoupler?s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. usage cautions 1. this product is weak for static elec tricity by designed with high-speed integr ated circuit so protect against static electricity when handling. 2. board designing (1) by-pass capacitor of more than 0.1 f is used between v cc and gnd near device. also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) keep the pattern connected the input (v in+ , v in ? ) and the output (v out+ , v out ? ), respectively, as short as possible. (3) do not connect any routing to the portion of t he frame exposed between the pins on the package of the photocoupler. if connected, it will a ffect the photocoupler's internal voltage and the photocoupler will not operate normally. (4) because the maximum frequency of the signal input to the photocoupler must be lower than the allowable frequency band, be sure to connect an anti -aliasing filter (an rc filter with r = 68 and c = 0.01 f, for example). (5) the signals output from the ps8551 include noise el ements such as chopping noise and quantization noise generated internally. therefore, be sure to restrict t he output frequency to the required bandwidth by adding a low-pass filter function ( an rc filter with r =10 k and c = 150 pf, for example) to the operational amplifier (post amplifier) in the next stage to the ps8551. 3. avoid storage at a high temp erature and high humidity. www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 16 of 17 sep 06, 2011 specification of vde marks license document parameter symbol spec. unit climatic test class (iec 60068-1/din en 60068-1) 40/085/21 dielectric strength maximum operating isolation voltage test voltage (partial discharge test, pr ocedure a for type test and random test) u pr = 1.5 u iorm , p d < 5 pc u iorm u pr 1 130 1 695 v peak v peak test voltage (partial discharge te st, procedure b for all devices) u pr = 1.875 u iorm , p d < 5 pc u pr 2 119 v peak highest permissible overvoltage u tr 8 000 v peak degree of pollution (din en 60664-1 vde0110 part 1) 2 comparative tracking index (iec 60112/din en 60112 (vde 0303 part 11)) cti 175 material group (din en 60664-1 vde0110 part 1) iii a storage temperature range t stg ?55 to +125 c operating temperature range t a ?40 to +85 c isolation resistance, minimum value v io = 500 v dc at t a = 25c v io = 500 v dc at t a max. at least 100c ris min. ris min. 10 12 10 11 safety maximum ratings (maximum permiss ible in case of fault, see thermal derating curve) package temperature current (input current i f , psi = 0) power (output or total power dissipation) isolation resistance v io = 500 v dc at t a = tsi tsi isi psi ris min. 175 400 700 10 9 c ma mw www.datasheet.co.kr datasheet pdf - http://www..net/
PS8551L4 chapter title r08ds0039ej0200 rev.2.00 page 17 of 17 sep 06, 2011 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, tran sport and dispose of materials that contain arsenic and ot her such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. www.datasheet.co.kr datasheet pdf - http://www..net/
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps855 1l4 data sheet description rev. date page summary ? sep 2007 ? previous no. :pn10670ej01v0ds 1.00 jun 14, 2011 throughout prelimi nary data sheet -> data sheet throughout safety standards approved p.3 modification of marking example addition of ordering information p.4 modification of absolute maximum ratings modification of recommended operating conditions p.5 modification of electrical characteristics (dc characteristics) p.6 modification of switching characteristics (adc characteristics) pp.7 to 9 addition of test circuit pp.10, 11 addition of typical characteristics p.13 addition of recommended mount p.15 modification of usage cautions p.16 addition of specification of vde marks license document 2.00 sep 06, 2011 p.3 modification of marking example p.5 modification of electrical characteristics (dc characteristics) cmrr in www.datasheet.co.kr datasheet pdf - http://www..net/
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(note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2011 renesas electronics corporation. all rights reserved. colophon 1.1 www.datasheet.co.kr datasheet pdf - http://www..net/

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